NVBG089N65S3F
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 970µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Gate Charge (Qg) (Max) @ Vgs:
74 NC @ 10 V
Rds On (Max) @ Id, Vgs:
89mOhm @ 18.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3598 PF @ 400 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
D2PAK-7
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
37A (Tc)
Power Dissipation (Max):
291W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVBG089
Model Number:
NVBG089N65S3F
Introduction
N-Channel 650 V 37A (Tc) 291W (Tc) Surface Mount D2PAK-7
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