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NTE2373
manufacturer:
NTE Electronics, Inc
Description:
MOSFET P-CHANNEL 200V 11A TO220
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
44 NC @ 10 V
Product Status:
Active
Mounting Type:
Through Hole
Package:
Bag
Input Capacitance (Ciss) (Max) @ Vds:
1200 PF @ 25 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 250µA
Supplier Device Package:
TO-220
Rds On (Max) @ Id, Vgs:
500mOhm @ 6.6A, 10V
Mfr:
NTE Electronics, Inc
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
125W (Tc)
Package / Case:
TO-220-3
Drain To Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
NTE2373
Introduction
P-Channel 200 V 11A (Tc) 125W (Tc) Through Hole TO-220
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