R6030JNZC17
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
7V @ 5.5mA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-3P-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
74 NC @ 15 V
Rds On (Max) @ Id, Vgs:
143mOhm @ 15A, 15V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V
Package:
Bag
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2500 PF @ 100 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3PF
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Power Dissipation (Max):
93W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
R6030
Model Number:
R6030JNZC17
Introduction
N-Channel 600 V 30A (Tc) 93W (Tc) Through Hole TO-3PF
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