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SICW080N120Y4-BP
manufacturer:
Micro Commercial Co
Description:
N-CHANNEL MOSFET,TO-247-4
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.6V @ 5mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-247-4
Gate Charge (Qg) (Max) @ Vgs:
41 NC @ 18 V
Rds On (Max) @ Id, Vgs:
85mOhm @ 20A, 18V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
18V
Package:
Bulk
Drain To Source Voltage (Vdss):
1200 V
Vgs (Max):
+22V, -8V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
890 PF @ 1000 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-4
Mfr:
Micro Commercial Co
Current - Continuous Drain (Id) @ 25°C:
39A
Power Dissipation (Max):
223W (Tc)
Technology:
SiC (Silicon Carbide Junction Transistor)
Base Product Number:
SICW080
Model Number:
SICW080N120Y4-BP
Introduction
N-Channel 1200 V 39A 223W (Tc) Through Hole TO-247-4
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