english
ES6U1T2R
manufacturer:
Rohm Semiconductor
Description:
MOSFET P-CH 12V 1.3A 6WEMT
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
2.4 NC @ 4.5 V
Product Status:
Obsolete
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
290 PF @ 6 V
Series:
-
Vgs (Max):
±10V
Vgs(th) (Max) @ Id:
1V @ 1mA
Supplier Device Package:
6-WEMT
Rds On (Max) @ Id, Vgs:
260mOhm @ 1.3A, 4.5V
Mfr:
Rohm Semiconductor
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Power Dissipation (Max):
700mW (Ta)
Package / Case:
6-SMD, Flat Leads
Drain To Source Voltage (Vdss):
12 V
Current - Continuous Drain (Id) @ 25°C:
1.3A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
Schottky Diode (Isolated)
Model Number:
ES6U1T2R
Introduction
P-Channel 12 V 1.3A (Ta) 700mW (Ta) Surface Mount 6-WEMT
Send RFQ
Stock:
MOQ: