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SSM3J66MFV,L3F
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET P-CH 20V 800MA VESM
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1V @ 1mA
Operating Temperature:
150°C
Package / Case:
SOT-723
Gate Charge (Qg) (Max) @ Vgs:
1.6 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
390mOhm @ 800mA, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.2V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
20 V
Vgs (Max):
+6V, -8V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
100 PF @ 10 V
Mounting Type:
Surface Mount
Series:
U-MOSVI
Supplier Device Package:
VESM
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
800mA (Ta)
Power Dissipation (Max):
150mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM3J66
Model Number:
SSM3J66MFV,L3F
Introduction
P-Channel 20 V 800mA (Ta) 150mW (Ta) Surface Mount VESM
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