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SSM6J503NU,LF
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET P-CH 20V 6A 6UDFNB
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
6-WDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
12.8 NC @ 10 V
Rds On (Max) @ Id, Vgs:
32.4mOhm @ 3A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
840 PF @ 10 V
Mounting Type:
Surface Mount
Series:
U-MOSVI
Supplier Device Package:
6-UDFNB (2x2)
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
6A (Ta)
Power Dissipation (Max):
1W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM6J503
Model Number:
SSM6J503NU,LF
Introduction
P-Channel 20 V 6A (Ta) 1W (Ta) Surface Mount 6-UDFNB (2x2)
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