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PMXB65ENEZ
manufacturer:
Nexperia USA Inc.
Description:
MOSFET N-CH 30V 3.2A DFN1010D-3
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-XDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
11 NC @ 10 V
Rds On (Max) @ Id, Vgs:
67mOhm @ 3.2A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
295 PF @ 15 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN1010D-3
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
3.2A (Ta)
Power Dissipation (Max):
400mW (Ta), 8.33W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PMXB65
Model Number:
PMXB65ENEZ
Introduction
N-Channel 30 V 3.2A (Ta) 400mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3
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