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SSM3J353F,LF
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET P-CH 30V 2A S-MINI
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
150°C
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
3.4 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
150mOhm @ 2A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
+20V, -25V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
159 PF @ 15 V
Mounting Type:
Surface Mount
Series:
U-MOSVI
Supplier Device Package:
S-Mini
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Power Dissipation (Max):
600mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM3J353
Model Number:
SSM3J353F,LF
Introduction
P-Channel 30 V 2A (Ta) 600mW (Ta) Surface Mount S-Mini
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