english
SI3483DDV-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET P-CH 30V 6.4A/8A 6TSOP
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Gate Charge (Qg) (Max) @ Vgs:
14.5 NC @ 10 V
Rds On (Max) @ Id, Vgs:
31.2mOhm @ 5A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
+16V, -20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
580 PF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
6-TSOP
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
6.4A (Ta), 8A (Tc)
Power Dissipation (Max):
2W (Ta), 3W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI3483
Model Number:
SI3483DDV-T1-GE3
Introduction
P-Channel 30 V 6.4A (Ta), 8A (Tc) 2W (Ta), 3W (Tc) Surface Mount 6-TSOP
Send RFQ
Stock:
MOQ: