SIA811ADJ-T1-GE3
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
Schottky Diode (Isolated)
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SC-70-6 Dual
Gate Charge (Qg) (Max) @ Vgs:
13 NC @ 8 V
Rds On (Max) @ Id, Vgs:
116mOhm @ 2.8A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
345 PF @ 10 V
Mounting Type:
Surface Mount
Series:
LITTLE FOOT®
Supplier Device Package:
PowerPAK® SC-70-6 Dual
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
4.5A (Tc)
Power Dissipation (Max):
1.8W (Ta), 6.5W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIA811
Model Number:
SIA811ADJ-T1-GE3
Introduction
P-Channel 20 V 4.5A (Tc) 1.8W (Ta), 6.5W (Tc) Surface Mount PowerPAK® SC-70-6 Dual
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