RQ1A070APTR
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
8-SMD, Flat Lead
Gate Charge (Qg) (Max) @ Vgs:
80 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
14mOhm @ 7A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
12 V
Vgs (Max):
-8V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
7800 PF @ 6 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TSMT8
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
7A (Ta)
Power Dissipation (Max):
550mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RQ1A070
Model Number:
RQ1A070APTR
Introduction
P-Channel 12 V 7A (Ta) 550mW (Ta) Surface Mount TSMT8
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