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SISS23DN-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET P-CH 20V 50A PPAK 1212-8S
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
900mV @ 250µA
Operating Temperature:
-50°C ~ 150°C (TJ)
Package / Case:
PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs:
300 NC @ 10 V
Rds On (Max) @ Id, Vgs:
4.5mOhm @ 20A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
8840 PF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® 1212-8S
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
50A (Tc)
Power Dissipation (Max):
4.8W (Ta), 57W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SISS23
Model Number:
SISS23DN-T1-GE3
Introduction
P-Channel 20 V 50A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
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