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SISH892BDN-T1-GE3
manufacturer:
Vishay Siliconix
Description:
N-CHANNEL 100 V (D-S) MOSFET POW
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
26.5 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
1110 PF @ 50 V
Series:
TrenchFET® Gen IV
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.4V @ 250µA
Supplier Device Package:
PowerPAK® SO-8DC
Rds On (Max) @ Id, Vgs:
30.4mOhm @ 10A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
3.4W (Ta), 29W (Tc)
Package / Case:
PowerPAK® SO-8
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
6.8A (Ta), 20A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
SISH892BDN-T1-GE3
Introduction
N-Channel 100 V 6.8A (Ta), 20A (Tc) 3.4W (Ta), 29W (Tc) Surface Mount PowerPAK® SO-8DC
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