NTMS5P02R2G
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
1.25V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
35 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
33mOhm @ 5.4A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
20 V
Vgs (Max):
±10V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1900 PF @ 16 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
3.95A (Ta)
Power Dissipation (Max):
790mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMS5
Model Number:
NTMS5P02R2G
Introduction
P-Channel 20 V 3.95A (Ta) 790mW (Ta) Surface Mount 8-SOIC
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