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SIS890ADN-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 100V 7.6A/24.7A PPAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Series:
-
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
29 NC @ 10 V
Supplier Device Package:
PowerPAK® 1212-8
Rds On (Max) @ Id, Vgs:
25.5mOhm @ 10A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
1330 PF @ 50 V
Drain To Source Voltage (Vdss):
100 V
Power Dissipation (Max):
3.6W (Ta), 39W (Tc)
Package / Case:
PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C:
7.6A (Ta), 24.7A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIS890
Model Number:
SIS890ADN-T1-GE3
Introduction
N-Channel 100 V 7.6A (Ta), 24.7A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
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