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SI7116BDN-T1-GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 40V 18.4A/65A PPAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Type:
N-Channel
FET Feature:
-
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Series:
-
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
48 NC @ 10 V
Supplier Device Package:
PowerPAK® 1212-8
Rds On (Max) @ Id, Vgs:
7.4mOhm @ 16A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds:
1915 PF @ 20 V
Drain To Source Voltage (Vdss):
40 V
Power Dissipation (Max):
5W (Ta), 62.5W (Tc)
Package / Case:
PowerPAK® 1212-8
Current - Continuous Drain (Id) @ 25°C:
18.4A (Ta), 65A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI7116
Model Number:
SI7116BDN-T1-GE3
Introduction
N-Channel 40 V 18.4A (Ta), 65A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® 1212-8
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