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NP16N06YLL-E1-AY
manufacturer:
Renesas Electronics America Inc
Description:
ABU / MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
18 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
600 PF @ 25 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2V @ 1mA
Supplier Device Package:
8-HSON (5x5.4)
Rds On (Max) @ Id, Vgs:
35mOhm @ 8A, 10V
Mfr:
Renesas Electronics America Inc
Operating Temperature:
175°C
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
1.25W (Ta), 27.3W (Tc)
Package / Case:
8-PowerLDFN
Drain To Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
16A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
NP16N06YLL-E1-AY
Introduction
N-Channel 60 V 16A (Tc) 1.25W (Ta), 27.3W (Tc) Surface Mount 8-HSON (5x5.4)
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