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TK110P10PL,RQ
manufacturer:
Toshiba Semiconductor and Storage
Description:
X35 PB-F POWER MOSFET TRANSISTOR
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 300µA
Operating Temperature:
175°C
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
33 NC @ 10 V
Rds On (Max) @ Id, Vgs:
10.6mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
2040 PF @ 50 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DPAK
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
40A (Tc)
Power Dissipation (Max):
75W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK110P10
Model Number:
TK110P10PL,RQ
Introduction
N-Channel 100 V 40A (Tc) 75W (Tc) Surface Mount DPAK
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