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SI3499DV-T1-BE3
manufacturer:
Vishay Siliconix
Description:
P-CHANNEL 1.5-V (G-S) MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
42 NC @ 4.5 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
TrenchFET®
Vgs (Max):
±5V
Vgs(th) (Max) @ Id:
750mV @ 250µA
Supplier Device Package:
6-TSOP
Rds On (Max) @ Id, Vgs:
23mOhm @ 7A, 4.5V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Power Dissipation (Max):
1.1W (Ta)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Drain To Source Voltage (Vdss):
8 V
Current - Continuous Drain (Id) @ 25°C:
5.3A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
SI3499DV-T1-BE3
Introduction
P-Channel 8 V 5.3A (Ta) 1.1W (Ta) Surface Mount 6-TSOP
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