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RF4G100BGTCR
manufacturer:
Rohm Semiconductor
Description:
NCH 40V 10A, HUML2020L8, POWER M
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
8-PowerUDFN
Gate Charge (Qg) (Max) @ Vgs:
10.6 NC @ 10 V
Rds On (Max) @ Id, Vgs:
14.2mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
530 PF @ 20 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN2020-8S
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
Power Dissipation (Max):
2W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RF4G100
Model Number:
RF4G100BGTCR
Introduction
N-Channel 40 V 10A (Ta) 2W (Ta) Surface Mount DFN2020-8S
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