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SQ9407EY-T1_GE3
manufacturer:
Vishay Siliconix
Description:
MOSFET P-CHANNEL 60V 4.6A 8SO
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TA)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
40 NC @ 10 V
Rds On (Max) @ Id, Vgs:
85mOhm @ 3.5A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1140 PF @ 30 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchFET®
Supplier Device Package:
8-SOIC
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
4.6A (Tc)
Power Dissipation (Max):
3.75W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQ9407
Model Number:
SQ9407EY-T1_GE3
Introduction
P-Channel 60 V 4.6A (Tc) 3.75W (Tc) Surface Mount 8-SOIC
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