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STP10P6F6
manufacturer:
STMicroelectronics
Description:
MOSFET P-CH 60V 10A TO220
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
6.4 NC @ 10 V
Rds On (Max) @ Id, Vgs:
160mOhm @ 5A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
340 PF @ 48 V
Mounting Type:
Through Hole
Series:
DeepGATE™, STripFET™ VI
Supplier Device Package:
TO-220
Mfr:
STMicroelectronics
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Power Dissipation (Max):
30W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STP10
Model Number:
STP10P6F6
Introduction
P-Channel 60 V 10A (Tc) 30W (Tc) Through Hole TO-220
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