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STFI15NM65N
manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 650V 12A I2PAKFP
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-262-3 Full Pack, I²Pak
Gate Charge (Qg) (Max) @ Vgs:
33.3 NC @ 10 V
Rds On (Max) @ Id, Vgs:
380mOhm @ 6A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
±25V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
983 PF @ 50 V
Mounting Type:
Through Hole
Series:
MDmesh™ II
Supplier Device Package:
I2PAKFP (TO-281)
Mfr:
STMicroelectronics
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Power Dissipation (Max):
30W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STFI15N
Model Number:
STFI15NM65N
Introduction
N-Channel 650 V 12A (Tc) 30W (Tc) Through Hole I2PAKFP (TO-281)
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