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TPH2R306NH1,LQ
manufacturer:
Toshiba Semiconductor and Storage
Description:
UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
72 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
6100 PF @ 30 V
Series:
U-MOSVIII-H
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 1mA
Supplier Device Package:
8-SOP Advance (5x5.75)
Rds On (Max) @ Id, Vgs:
2.3mOhm @ 50A, 10V
Mfr:
Toshiba Semiconductor And Storage
Operating Temperature:
150°C
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6.5V, 10V
Power Dissipation (Max):
800mW (Ta), 170W (Tc)
Package / Case:
8-PowerTDFN
Drain To Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
136A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
TPH2R306NH1,LQ
Introduction
N-Channel 60 V 136A (Tc) 800mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5.75)
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