SQR70090ELR_GE3
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-4, DPak (3 Leads + Tab)
Gate Charge (Qg) (Max) @ Vgs:
65 NC @ 10 V
Rds On (Max) @ Id, Vgs:
8.7mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3500 PF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchFET®
Supplier Device Package:
D-PAK (TO-252)
Mfr:
Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C:
86A (Tc)
Power Dissipation (Max):
136W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQR70090
Model Number:
SQR70090ELR_GE3
Introduction
N-Channel 100 V 86A (Tc) 136W (Tc) Surface Mount D-PAK (TO-252)
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