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NP35N04YLG-E1-AY
manufacturer:
Renesas Electronics America Inc
Description:
ABU / MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
51 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
2850 PF @ 25 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Supplier Device Package:
8-HSON (5x5.4)
Rds On (Max) @ Id, Vgs:
9.7mOhm @ 17.5A, 10V
Mfr:
Renesas Electronics America Inc
Operating Temperature:
175°C
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Power Dissipation (Max):
1W (Ta), 77W (Tc)
Package / Case:
8-PowerLDFN
Drain To Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
35A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
NP35N04YLG-E1-AY
Introduction
N-Channel 40 V 35A (Tc) 1W (Ta), 77W (Tc) Surface Mount 8-HSON (5x5.4)
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