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R6507END3TL1
manufacturer:
Rohm Semiconductor
Description:
650V 7A TO-252, LOW-NOISE POWER
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 200µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
20 NC @ 10 V
Rds On (Max) @ Id, Vgs:
665mOhm @ 2.4A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
390 PF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-252
Mfr:
Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C:
7A (Tc)
Power Dissipation (Max):
78W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
R6507
Model Number:
R6507END3TL1
Introduction
N-Channel 650 V 7A (Tc) 78W (Tc) Surface Mount TO-252
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