english
GAN190-650EBEZ
manufacturer:
Nexperia USA Inc.
Description:
650 V, 190 MOHM GALLIUM NITRIDE
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 12.2mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-VDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
2.8 NC @ 6 V
Rds On (Max) @ Id, Vgs:
190mOhm @ 3.9A, 6V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
+7V, -1.4V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
96 PF @ 400 V
Mounting Type:
Surface Mount, Wettable Flank
Series:
-
Supplier Device Package:
DFN8080-8
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
11.5A (Ta)
Power Dissipation (Max):
125W (Ta)
Technology:
GaNFET (Gallium Nitride)
Base Product Number:
GAN190
Model Number:
GAN190-650EBEZ
Introduction
N-Channel 650 V 11.5A (Ta) 125W (Ta) Surface Mount, Wettable Flank DFN8080-8
Send RFQ
Stock:
MOQ: