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RS6L120BGTB1
manufacturer:
Rohm Semiconductor
Description:
NCH 60V 150A, HSOP8, POWER MOSFE
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
51 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
3520 PF @ 30 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Supplier Device Package:
8-HSOP
Rds On (Max) @ Id, Vgs:
2.7mOhm @ 90A, 10V
Mfr:
Rohm Semiconductor
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Power Dissipation (Max):
104W (Tj)
Package / Case:
8-PowerTDFN
Drain To Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
120A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
RS6L120BGTB1
Introduction
N-Channel 60 V 120A (Ta) 104W (Tj) Surface Mount 8-HSOP
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