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TK170V65Z,LQ
manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 650V 18A 5DFN
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 730µA
Operating Temperature:
150°C
Package / Case:
4-VSFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
29 NC @ 10 V
Rds On (Max) @ Id, Vgs:
170mOhm @ 9A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
±30V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1635 PF @ 300 V
Mounting Type:
Surface Mount
Series:
DTMOSVI
Supplier Device Package:
4-DFN-EP (8x8)
Mfr:
Toshiba Semiconductor And Storage
Current - Continuous Drain (Id) @ 25°C:
18A (Ta)
Power Dissipation (Max):
150W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TK170V65
Model Number:
TK170V65Z,LQ
Introduction
N-Channel 650 V 18A (Ta) 150W (Tc) Surface Mount 4-DFN-EP (8x8)
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