PSMN4R8-100YSEX
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
120 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
8290 PF @ 50 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3.6V @ 1mA
Supplier Device Package:
LFPAK56, Power-SO8
Rds On (Max) @ Id, Vgs:
4.8mOhm @ 25A, 10V
Mfr:
Nexperia USA Inc.
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
294W (Ta)
Package / Case:
SOT-1023, 4-LFPAK
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
120A (Ta)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
PSMN4R8-100YSEX
Introduction
N-Channel 100 V 120A (Ta) 294W (Ta) Surface Mount LFPAK56, Power-SO8
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