FCMT199N60
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
4-PowerTSFN
Gate Charge (Qg) (Max) @ Vgs:
74 NC @ 10 V
Rds On (Max) @ Id, Vgs:
199mOhm @ 10A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
600 V
Vgs (Max):
±20V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
2950 PF @ 100 V
Mounting Type:
Surface Mount
Series:
SuperFET® II
Supplier Device Package:
Power88
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
20.2A (Tc)
Power Dissipation (Max):
208W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FCMT199
Model Number:
FCMT199N60
Introduction
N-Channel 600 V 20.2A (Tc) 208W (Tc) Surface Mount Power88
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