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SIHB120N60E-T1-GE3
manufacturer:
Vishay Siliconix
Description:
N-CHANNEL 600V
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
45 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
1562 PF @ 100 V
Series:
E
Vgs (Max):
±30V
Vgs(th) (Max) @ Id:
5V @ 250µA
Supplier Device Package:
D²PAK (TO-263)
Rds On (Max) @ Id, Vgs:
120mOhm @ 12A, 10V
Mfr:
Vishay Siliconix
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
179W (Tc)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drain To Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
25A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
SIHB120N60E-T1-GE3
Introduction
N-Channel 600 V 25A (Tc) 179W (Tc) Surface Mount D²PAK (TO-263)
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