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GAN3R2-100CBEAZ
manufacturer:
Nexperia USA Inc.
Description:
100 V, 3.2 MOHM GALLIUM NITRIDE
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 9mA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
8-XFBGA, WLCSP
Gate Charge (Qg) (Max) @ Vgs:
12 NC @ 5 V
Rds On (Max) @ Id, Vgs:
3.2mOhm @ 25A, 5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
+6V, -4V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1000 PF @ 50 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-WLCSP (3.5x2.13)
Mfr:
Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C:
60A
Power Dissipation (Max):
394W
Technology:
GaNFET (Gallium Nitride)
Base Product Number:
GAN3R2
Model Number:
GAN3R2-100CBEAZ
Introduction
N-Channel 100 V 60A 394W Surface Mount 8-WLCSP (3.5x2.13)
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