logo
Send Message
Home > Products > > STI260N6F6

STI260N6F6

manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 75V 120A I2PAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Gate Charge (Qg) (Max) @ Vgs:
183 NC @ 10 V
Rds On (Max) @ Id, Vgs:
3mOhm @ 60A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tube
Drain To Source Voltage (Vdss):
75 V
Vgs (Max):
±20V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
11400 PF @ 25 V
Mounting Type:
Through Hole
Series:
DeepGATE™, STripFET™ VI
Supplier Device Package:
I2PAK
Mfr:
STMicroelectronics
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Power Dissipation (Max):
300W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STI260N
Model Number:
STI260N6F6
Introduction
N-Channel 75 V 120A (Tc) 300W (Tc) Through Hole I2PAK
Send RFQ
Stock:
MOQ: