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STB19NM65N
manufacturer:
STMicroelectronics
Description:
MOSFET N-CH 650V 15.5A D2PAK
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
55 NC @ 10 V
Rds On (Max) @ Id, Vgs:
270mOhm @ 7.75A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
±25V
Product Status:
Obsolete
Input Capacitance (Ciss) (Max) @ Vds:
1900 PF @ 50 V
Mounting Type:
Surface Mount
Series:
MDmesh™ II
Supplier Device Package:
D2PAK
Mfr:
STMicroelectronics
Current - Continuous Drain (Id) @ 25°C:
15.5A (Tc)
Power Dissipation (Max):
150W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
STB19N
Model Number:
STB19NM65N
Introduction
N-Channel 650 V 15.5A (Tc) 150W (Tc) Surface Mount D2PAK
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