EPC2307ENGRT
manufacturer:
EPC
Description:
TRANS GAN 200V .010OHM 7QFN
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.5V @ 4mA
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
7-PowerWQFN
Gate Charge (Qg) (Max) @ Vgs:
10.6 NC @ 5 V
Rds On (Max) @ Id, Vgs:
10mOhm @ 16A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
200 V
Vgs (Max):
+6V, -4V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1401 PF @ 100 V
Mounting Type:
Surface Mount
Series:
EGaN®
Supplier Device Package:
7-QFN (3x5)
Mfr:
EPC
Current - Continuous Drain (Id) @ 25°C:
48A (Ta)
Power Dissipation (Max):
-
Technology:
GaNFET (Gallium Nitride)
Base Product Number:
EPC2307
Introduction
N-Channel 200 V 48A (Ta) Surface Mount 7-QFN (3x5)
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| Image | Part # | Description | |
|---|---|---|---|
|
|
EPC2302ENGRT |
TRANS GAN 100V DIE .0019OHM
|
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|
EPC2049ENGRT |
GANFET N-CH 40V 16A DIE
|
|
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|
EPC2034 |
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|
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|
|
EPC2030ENGRT |
GANFET NCH 40V 31A DIE
|
|
|
|
EPC2031ENGRT |
GANFET NCH 60V 31A DIE
|
|
|
|
EPC2016 |
GANFET N-CH 100V 11A DIE
|
|
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|
EPC2021ENGR |
TRANS GAN 80V 60A BUMPED DIE
|
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|
EPC2014 |
GANFET N-CH 40V 10A DIE OUTLINE
|
|
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EPC2015 |
GANFET N-CH 40V 33A DIE OUTLINE
|
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EPC2619ENGRT |
TRANS GAN 80V .0033OHM 6LGA
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