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NTMTSC4D2N10GTXG
manufacturer:
onsemi
Description:
100V MVSOA IN DFNW8(PQFN8X8) PAC
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
159 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount, Wettable Flank
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
10450 PF @ 50 V
Series:
-
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
4V @ 450µA
Supplier Device Package:
8-TDFNW (8.3x8.4)
Rds On (Max) @ Id, Vgs:
4.2mOhm @ 88A, 10V
Mfr:
Onsemi
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
3.9W (Ta), 267W (Tc)
Package / Case:
8-PowerTDFN
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
21A (Ta), 178A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
NTMTSC4D2N10GTXG
Introduction
N-Channel 100 V 21A (Ta), 178A (Tc) 3.9W (Ta), 267W (Tc) Surface Mount, Wettable Flank 8-TDFNW (8.3x8.4)
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