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NTBG060N065SC1
manufacturer:
onsemi
Description:
SILICON CARBIDE (SIC) MOSFET - 4
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4.3V @ 6.5mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Gate Charge (Qg) (Max) @ Vgs:
74 NC @ 18 V
Rds On (Max) @ Id, Vgs:
70mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
15V, 18V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
650 V
Vgs (Max):
+22V, -8V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1473 PF @ 325 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
D2PAK-7
Mfr:
Onsemi
Current - Continuous Drain (Id) @ 25°C:
46A (Tc)
Power Dissipation (Max):
170W (Tc)
Technology:
SiCFET (Silicon Carbide)
Base Product Number:
NTBG060
Model Number:
NTBG060N065SC1
Introduction
N-Channel 650 V 46A (Tc) 170W (Tc) Surface Mount D2PAK-7
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