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1N65G
Manufacturer:
UMW
Description:
SOT-223 N-CHANNEL POWER MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
4.8 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
150 PF @ 25 V
Series:
UMW
Vgs (Max):
±30V
Vgs(th) (Max) @ Id:
4V @ 250µA
Supplier Device Package:
SOT-223
Rds On (Max) @ Id, Vgs:
11Ohm @ 500mA, 10V
Mfr:
UMW
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Power Dissipation (Max):
-
Package / Case:
TO-261-4, TO-261AA
Drain To Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
1A (Tj)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
1N65G
Introduction
N-Channel 650 V 1A (Tj) Surface Mount SOT-223
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