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PJD30N15_L2_00001
manufacturer:
Panjit International Inc.
Description:
150V N-CHANNEL ENHANCEMENT MODE
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
29.5 NC @ 10 V
Rds On (Max) @ Id, Vgs:
65mOhm @ 5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
150 V
Vgs (Max):
±25V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1764 PF @ 30 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-252
Mfr:
Panjit International Inc.
Current - Continuous Drain (Id) @ 25°C:
3.5A (Ta), 25A (Tc)
Power Dissipation (Max):
2W (Ta), 102W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PJD30
Model Number:
PJD30N15_L2_00001
Introduction
N-Channel 150 V 3.5A (Ta), 25A (Tc) 2W (Ta), 102W (Tc) Surface Mount TO-252
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