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IRF7831TRPBF
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 30V 21A 8SO
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
2.35V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
60 NC @ 4.5 V
Rds On (Max) @ Id, Vgs:
3.6mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±12V
Product Status:
Not For New Designs
Input Capacitance (Ciss) (Max) @ Vds:
6240 PF @ 15 V
Mounting Type:
Surface Mount
Series:
HEXFET®
Supplier Device Package:
8-SO
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
21A (Ta)
Power Dissipation (Max):
2.5W (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IRF7831
Model Number:
IRF7831TRPBF
Introduction
N-Channel 30 V 21A (Ta) 2.5W (Ta) Surface Mount 8-SO
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