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BSC084P03NS3GATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 30V 14.9A 8TDSON
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.1V @ 105µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
58 NC @ 10 V
Rds On (Max) @ Id, Vgs:
8.4mOhm @ 50A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
30 V
Vgs (Max):
±25V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
4785 PF @ 15 V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
PG-TDSON-8-5
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
14.9A (Ta), 78.6A (Tc)
Power Dissipation (Max):
2.5W (Ta), 69W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
BSC084
Model Number:
BSC084P03NS3GATMA1
Introduction
P-Channel 30 V 14.9A (Ta), 78.6A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-5
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