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ISC080N10NM6ATMA1
manufacturer:
Infineon Technologies
Description:
TRENCH >=100V PG-TDSON-8
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.3V @ 36µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
24 NC @ 10 V
Rds On (Max) @ Id, Vgs:
8.05mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
8V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
1800 PF @ 50 V
Mounting Type:
Surface Mount
Series:
OptiMOS™ 6
Supplier Device Package:
PG-TDSON-8 FL
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
13A (Ta), 75A (Tc)
Power Dissipation (Max):
3W (Ta), 100W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
ISC080N
Model Number:
ISC080N10NM6ATMA1
Introduction
N-Channel 100 V 13A (Ta), 75A (Tc) 3W (Ta), 100W (Tc) Surface Mount PG-TDSON-8 FL
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