english
IQE030N06NM5CGATMA1
manufacturer:
Infineon Technologies
Description:
TRENCH 40<-<100V PG-TTFN-9
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.3V @ 50µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
49 NC @ 10 V
Rds On (Max) @ Id, Vgs:
3mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
3800 PF @ 30 V
Mounting Type:
Surface Mount, Wettable Flank
Series:
OptiMOS™
Supplier Device Package:
PG-TTFN-9-1
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
21A (Ta), 137A (Tc)
Power Dissipation (Max):
2.5W (Ta), 107W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IQE030N
Model Number:
IQE030N06NM5CGATMA1
Introduction
N-Channel 60 V 21A (Ta), 137A (Tc) 2.5W (Ta), 107W (Tc) Surface Mount, Wettable Flank PG-TTFN-9-1
Send RFQ
Stock:
MOQ: