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IPF009N04NF2SATMA1
manufacturer:
Infineon Technologies
Description:
TRENCH <= 40V
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.4V @ 249µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-7, D²Pak (6 Leads + Tab)
Gate Charge (Qg) (Max) @ Vgs:
315 NC @ 10 V
Rds On (Max) @ Id, Vgs:
0.9mOhm @ 100A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
15000 PF @ 20 V
Mounting Type:
Surface Mount
Series:
StrongIRFET™2
Supplier Device Package:
PG-TO263-7-U02
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
49A (Ta), 302A (Tc)
Power Dissipation (Max):
3.8W (Ta), 375W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPF009
Model Number:
IPF009N04NF2SATMA1
Introduction
N-Channel 40 V 49A (Ta), 302A (Tc) 3.8W (Ta), 375W (Tc) Surface Mount PG-TO263-7-U02
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