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ISC010N06NM5ATMA1
manufacturer:
Infineon Technologies
Description:
OPTIMOS5 60 V POWER MOSFET IN SU
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
143 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
11000 PF @ 30 V
Series:
OptiMOS™
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3.3V @ 147µA
Supplier Device Package:
PG-TSON-8-3
Rds On (Max) @ Id, Vgs:
1.05mOhm @ 50A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Power Dissipation (Max):
3W (Ta), 214W (Tc)
Package / Case:
8-PowerTDFN
Drain To Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
39A (Ta), 330A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
ISC010N06NM5ATMA1
Introduction
N-Channel 60 V 39A (Ta), 330A (Tc) 3W (Ta), 214W (Tc) Surface Mount PG-TSON-8-3
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