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IPB030N08N3GATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 80V 160A TO263-7
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
FET Feature:
-
Vgs(th) (Max) @ Id:
3.5V @ 155µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-7, D²Pak (6 Leads + Tab)
Gate Charge (Qg) (Max) @ Vgs:
117 NC @ 10 V
Rds On (Max) @ Id, Vgs:
3mOhm @ 100A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Drain To Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Product Status:
Active
Input Capacitance (Ciss) (Max) @ Vds:
8110 PF @ 40 V
Mounting Type:
Surface Mount
Series:
OptiMOS™
Supplier Device Package:
PG-TO263-7
Mfr:
Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:
160A (Tc)
Power Dissipation (Max):
214W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
IPB030
Model Number:
IPB030N08N3GATMA1
Introduction
N-Channel 80 V 160A (Tc) 214W (Tc) Surface Mount PG-TO263-7
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