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IPT015N10NF2SATMA1
manufacturer:
Infineon Technologies
Description:
MOSFET
Category:
Discrete Semiconductor Products
Specifications
Category:
Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs:
242 NC @ 10 V
Product Status:
Active
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds:
11000 PF @ 50 V
Series:
StrongIRFET™ 2
Vgs (Max):
±20V
Vgs(th) (Max) @ Id:
3.8V @ 267µA
Supplier Device Package:
PG-HSOF-8
Rds On (Max) @ Id, Vgs:
1.5mOhm @ 150A, 10V
Mfr:
Infineon Technologies
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Power Dissipation (Max):
3.8W (Ta), 300W (Tc)
Package / Case:
8-PowerSFN
Drain To Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
35A (Ta), 315A (Tc)
Technology:
MOSFET (Metal Oxide)
FET Feature:
-
Model Number:
IPT015N10NF2SATMA1
Introduction
N-Channel 100 V 35A (Ta), 315A (Tc) 3.8W (Ta), 300W (Tc) Surface Mount PG-HSOF-8
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